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InP長晶設(shè)備
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InP長晶設(shè)備
概要:
產(chǎn)品應(yīng)用/Product Applications: ?適用領(lǐng)域:單晶生長 Relevant Industries:Single Crystal Growth ?適用材料:Ga2O3、GaAs等 Suitable for Processing: Ga2O3 (Gallium Oxide),GaAS(Gallium Arsenide), etc. ?晶圓尺寸:12/8/6英寸 Wafer Size: 12/8/6 inch 技術(shù)指標/Technical Indicators: ?制程溫度范圍:2200°C Process Temperature Range:2200°C ?加熱方式:感應(yīng)/電阻 Heating Method:Induction/Resistance
關(guān)鍵詞:
InP長晶設(shè)備
產(chǎn)品應(yīng)用/Product Applications:
♦適用領(lǐng)域:單晶生長
Relevant Industries:Single Crystal Growth
♦適用材料:Ga2O3、GaAs等
Suitable for Processing: Ga2O3 (Gallium Oxide),GaAS(Gallium Arsenide), etc.
♦晶圓尺寸:12/8/6英寸
Wafer Size: 12/8/6 inch
技術(shù)指標/Technical Indicators:
♦制程溫度范圍:2200°C
Process Temperature Range:2200°C
♦加熱方式:感應(yīng)/電阻
Heating Method:Induction/Resistance
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